| Application of quasi-hydrodynamic model for the analysis of electronic transport in field and bipolar transistors in conditions of a pulse ionizing radiation in view of the raised temperatures |
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| Authors |
| | Puzanov A.S. |
| | Volkova E.V. |
| | Obolensky S.V. |
| | Petrov S.G. |
| Date of publication |
| | 2008 |
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| Abstract |
| | Features of application of quasi-hydrodynamic model for the analysis of electronic transport in field and bipolar transistors in conditions of influence of pulse gamma- and neutron radiation in view of the raised temperatures are discussed. Results of calculations of energy relaxation time and quasi-pulse of electrons in conditions of a radiating irradiation and at the raised temperatures are resulted. Comparison of results of modelling and experimental data is given. There are discussed peculiarities of simulation of high-energy processes such as shock ionization in collector junction of bipolar transistor, with using quasi-hydrodynamic model and method of Monte-Carlo. |
| Keywords |
| | quasi-hydrodynamic model, field and bipolar transistor, ionizing radiation |
| Library reference |
| | Puzanov A.S., Volkova E.V., Obolensky S.V., Petrov S.G. Application of quasi-hydrodynamic model for the analysis of electronic transport in field and bipolar transistors in conditions of a pulse ionizing radiation in view of the raised temperatures // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 286-292. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/52.pdf |
