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Application of a technique of not destroying control of dose stability of parties SoS CMOS VLSI
Authors
	Davydov G.G.
	Sogoyan A.V.
	Petrov A.G.
	Artamonov A.S.
	Yashanin I.B.
	Skobelev A.V.
	Sedakov A.Yu.
Date of publication
	2008
Abstract
	Methods of application of a technique of not destroying control of SoS CMOS VLSI stability to dose impacts are considered. Efficiency of inspection of packaged VLSI, and also chips before its packaging is shown. Insertion in a technological route of manufacturing of operation of radiating inspection has allowed to optimize parameters of technological process with the purpose of increase dose stability of VLSI.
Keywords
	techniquee of non-destroying control, Si-on-Sapphire CMOS VLSI
Library reference
	Davydov G.G., Sogoyan A.V., Petrov A.G., Artamonov A.S., Yashanin I.B., Skobelev A.V., Sedakov A.Yu. Application of a technique of not destroying control of dose stability of parties SoS CMOS VLSI // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 280-285.
URL of paper
	http://www.mes-conference.ru/data/year2008/51.pdf