| Photosensitive CCD VLSI TCAD modeling |
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| Authors |
| | Pugachev A.A. |
| | Maklakova O.V. |
| | Kushnir A.A. |
| Date of publication |
| | 2008 |
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| Abstract |
| | The computer-aided design system ISE TCAD (Synopsys) is widely used for semiconductor devices design. The paper discusses the some troubles of TCAD applications on charge-coupled devices (CCD) simulation. Some types of CCD’s structures can’t be realized carefully by TCAD tools: auxiliary diffusion regions are necessary. The simulation aspects of interline CCD element with vertical antiblooming are discussed. |
| Keywords |
| | Photosensitive VLSI, CCD, technological-device model, TCAD |
| Library reference |
| | Pugachev A.A., Maklakova O.V., Kushnir A.A. Photosensitive CCD VLSI TCAD modeling // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 189-194. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/32.pdf |
