| Investigation and optimization of technological parameters of formation of the logical structure of the cells on "Silicon on Insulator" |
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| Authors |
| | Dolgij L.N. |
| | Efremov V.A. |
| | Nelayev V.V. |
| | Stempitsky V.R. |
| Date of publication |
| | 2008 |
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| Abstract |
| | The results of physical modeling of SOI technology and logic CMOS cell was presented. Optimization of technological parameters of manufacturing process of a CMOS cell was performed using the response surface methodology. |
| Keywords |
| | SOI structure, physical modeling, process optimization, response surface methodology |
| Library reference |
| | Dolgij L.N., Efremov V.A., Nelayev V.V., Stempitsky V.R. Investigation and optimization of technological parameters of formation of the logical structure of the cells on "Silicon on Insulator" // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 169-172. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/28.pdf |
