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Simulation of processes of equilibrium and fast heat treatments at formation of the active areas of submicronic and nanomicronic ICs
Authors
	Komarov F.F.
	Velichko O.I.
	Zayats G.M.
	Komarov A.F.
	Mironov A.M.
	Tsurko V.A.
Date of publication
	2008
Abstract
	The two-dimensional model of migration of the implanted arsenic atoms in silicon is developed, and also model of reallocation of the implanted arsenic atoms in system SiO2/Si. The offered numerical method allows to build correct algorithm without traditionally entered on boundary section a artificial parameter (transport rate). The presented results of calculations will well be coordinated with experimental data.
Keywords
	two-dimensional model of atom migration
Library reference
	Komarov F.F., Velichko O.I., Zayats G.M., Komarov A.F., Mironov A.M., Tsurko V.A. Simulation of processes of equilibrium and fast heat treatments at formation of the active areas of submicronic and nanomicronic ICs // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 165-168.
URL of paper
	http://www.mes-conference.ru/data/year2008/27.pdf