| Standard cell characterezition methodoligy with respect MOSFET threshold voltage variation |
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| Authors |
| | Kagramanyan E.R. |
| | Gavrilov S.V. |
| | Egorov Yu.B. |
| Date of publication |
| | 2008 |
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| Abstract |
| | In the article standard digital CMOS gate model for timing analysis of IC reliability aware threshold voltage degradation (due to NBTI–effect)is proposed. For models characterization it is used the method of delay and transition quadratic approximation. Results of experiments allows to conclude about efficiency of proposed methods. |
| Keywords |
| | Variation, Negative Bias Temperature Instability (NBTI), quadratic approximation |
| Library reference |
| | Kagramanyan E.R., Gavrilov S.V., Egorov Yu.B. Standard cell characterezition methodoligy with respect MOSFET threshold voltage variation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 102-107. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/15.pdf |
