| Device-technological and circuit models of BiCMOS transistors, made on silicon-germanium technology |
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| Authors |
| | Torgovnikov R.A. |
| Date of publication |
| | 2008 |
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| Abstract |
| | Device-technological and circuit models of BiCMOS transistors, made on silicon-germanium technology |
| Keywords |
| | models of transistors, BiCMOS, Si-Ge technology |
| Library reference |
| | Torgovnikov R.A. Device-technological and circuit models of BiCMOS transistors, made on silicon-germanium technology // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 539-548. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/102.pdf |
