| Constructive and technological design of silicon color photocells with deep color separation based on isotype ð+-ð junctions |
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| Authors |
| | Gorshkova N.M. |
| Date of publication |
| | 2008 |
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| Abstract |
| | The design rules for the new type of color image matrix photorecievers based on deep color separation principles in the case of CMOS technology are presented. The simulated and experimental spectral characteristics of the photocells are obtained. The physical structure of BiCMOS chip is proposed when bipolar transistors, CMOS devices and photocells are used simultaneously. |
| Keywords |
| | Matrix photodetector, photocell, photosensitivity, CMOS technology |
| Library reference |
| | Gorshkova N.M. Constructive and technological design of silicon color photocells with deep color separation based on isotype ð+-ð junctions // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 522-527. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/98.pdf |
