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Application of autophotoelectronic semiconductor microstructures for the analysis of gas mixes

Authors
 Egorov N.M.
 Levitsky A.A.
Date of publication
 2006

Abstract
 The method of the analysis of gas mixes on the basis of the autophotoelectronic semiconductor microstructures sensitive in the IR-range at presence various components of a gas mix is proposed; application of semiconductor microstructures for definition of structure of gas mixes is discussed; features of autoelectronic issue from semiconductors under action of IR-radiation are considered.
Keywords
 autophotoelectronic semiconductor microstructures, analysis of gas mixes
Library reference
 Egorov N.M., Levitsky A.A. Application of autophotoelectronic semiconductor microstructures for the analysis of gas mixes // Problems of Perspective Microelectronic Systems Development - 2006. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2006. P. 449-450.
URL of paper
 http://www.mes-conference.ru/data/year2006/82.pdf

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