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Distributed Power Amplifiers
Authors
	Gogolev N.I.
	Salikh Ayatulla
	Bragin D.S.
	Dmitriev V.D.
Date of publication
	2022
DOI
	10.31114/2078-7707-2022-4-155-162
Abstract
	— In this paper, we reviewed the published integrated amplifiers circuits with distributed amplification (DA). We selected and evaluated several publications for their features, advantages and disadvantages in comparison with other types of broadband amplifiers. Modern devices under development are becoming faster. This process is key in the development trend of modern radio engineering. This leads to increased requirements for other technical parameters: noise immunity, stability, reliability, etc. In turn, an amplifier with distributed amplification is referred to as a promising device for broadband amplification. This structure allows you to add the power of high-frequency signals. The first section describes the various methods available for implementing broadband amplifiers. In this section we gave descriptions and equivalent circuits of a transistor feedback amplifier, a balanced amplifier, an amplifier with reactive-dissipative matching, and a distributed amplifier. The first section covers the topic of DA in more detail, the advantages and disadvantages of implementing such schemes. We described a distributed amplifier with a cascode structure, its features and design problems, and compared it with a classical circuit design solution. This section contains important information about the technological processes used and which are necessary to design an DA or any other microcircuit. The second section cover the topic of the existing developments of integrated microwave amplifiers with distributed amplification based on GaN and GaAs technological processes. Here we talked about the various approaches to solving the problems that the authors of these works encountered in order to achieve the set requirements. We followed the differences in the studied technological processes that the authors used. Further in the table, we compared the main characteristics of the microcircuits. At the end of paper, we have given a summary table of microcircuits available on the market.
Keywords
	gallium arsenide (GaAs), gallium nitride (GaN), HEMT, cascode, DA, wide frequency band.
Library reference
	Gogolev N.I., Salikh Ayatulla, Bragin D.S., Dmitriev V.D. Distributed Power Amplifiers // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 4. P. 155-162. doi:10.31114/2078-7707-2022-4-155-162
URL of paper
	http://www.mes-conference.ru/data/year2022/pdf/D089.pdf