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Heterojunction bipolar transistor with pnp structure in the gallium arsenide technology HBT-HEMT
Authors
	Lovshenko I.Yu.
	Kratovich P.S.
	Stempitsky V.R.
	Dvornikov O.V.
	Kunts A.V.
	Pavluchik A.A.
Date of publication
	2022
DOI
	10.31114/2078-7707-2022-4-149-154
Abstract
	An analysis of the current state of the development of integrated circuits for harsh operating conditions was performed, on the basis of which the use of the gallium arsenide technology HBT-HEMT was proposed. The results of TCAD modeling of the electrical characteristics of a heterojunction bipolar transistor with a pnp structure based on GaAs are presented. The following main parameters were determined: Early voltage VA, base current amplification factor in the circuit with a common emitter BETA, breakdown voltage of the collector-emitter gap VCEBR, cutoff frequency fT. The effect of the material composition x of the AlxGa1-xAs compound and the width of the active base WB on these parameters is studied, and recommendations are given for choosing their optimal values. An estimate of the change in the parameters of the pnp HBT device structure with temperature is given.
Keywords
	heterojunction, heterojunction bipolar transistor, AIIIBV, simulation, performance characteristics, current gain, Early voltage, breakdown voltage
Library reference
	Lovshenko I.Yu., Kratovich P.S., Stempitsky V.R., Dvornikov O.V., Kunts A.V., Pavluchik A.A. Heterojunction bipolar transistor with pnp structure in the gallium arsenide technology HBT-HEMT // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 4. P. 149-154. doi:10.31114/2078-7707-2022-4-149-154
URL of paper
	http://www.mes-conference.ru/data/year2022/pdf/D083.pdf