| Gallium arsenide operational amplifiers with transconductance multipliers of input differential stages |
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| Authors |
| | Prokopenko N.N. |
| | Dvornikov O.V. |
| | Chumakov V.E. |
| | Kleimenkin D.V. |
| Date of publication |
| | 2022 |
| DOI |
| | 10.31114/2078-7707-2022-3-163-169 |
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| Abstract |
| | The basic circuit solutions of operational amplifiers (Op-Amps), focused on the production of field effect transistors (FET) with integrated n-type channel and p-n-p transistors on a GaAs chip, are considered. A perspective three-cascade Op-Amp based on pHEMT (pseudo morphic high electron mobility transistor) and p-n-p HBT (hetero junction bipolar transistor) in which small systematic components of input offset voltage caused by the influence of base currents of p-n-p transistors and its temperature and radiation variations are realized are proposed. Three variants of construction of input cascades are investigated, in which an increase by 1-2 orders of magnitude of transconductance of amplification during pHEMT operation in microampere ranges of currents (10-100 μA) is provided. A mathematical analysis of the recommended operational amplifier architecture on GaAs FETs and p-n-p transistors is given. The mathematical analysis of the main modifications of the input stages with a transconductance multiplier is described. The results of computer simulation of GaAs operational amplifier with increased gain using GaAs pHEMT and p-n-p HBT models are presented. The logarithmic amplitude-frequency response of the voltage gain of the proposed op-amp is studied. |
| Keywords |
| | operational amplifier, GaAs pHEMT, GaAs p-n-p HBT, input offset voltage, the transconductance of the differential cascade gain. |
| Library reference |
| | Prokopenko N.N., Dvornikov O.V., Chumakov V.E., Kleimenkin D.V. Gallium arsenide operational amplifiers with transconductance multipliers of input differential stages // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 3. P. 163-169. doi:10.31114/2078-7707-2022-3-163-169 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2022/pdf/D036.pdf |
