Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Investigation of Porous Silicon Dioxide Films Modified with Carbon
Authors
	Strelkova A.E.
	Sakharov Yu.V.
Date of publication
	2022
DOI
	10.31114/2078-7707-2022-3-170-175
Abstract
	In the field of micro- and nanoelectronics, many scientists year after year show great interest in the search for and research of new materials that contribute to a radical expansion of the electronic component base, which is associated, first of all, with a significant increase in production costs with the scaling of scientific and technical processes. A striking example of such materials are porous oxide films, the relevance of which is due to their use in photodetectors, LEDs, vacuum microelectronics cathodes, as interlayer insulation of integrated circuits (ICs), nanomembranes, and antireflective coatings in optical electronics devices. Due to the use of these films as insulating materials, the speed of propagation of electrical signals noticeably increases, due to the lower dielectric constant than that of non-porous structures, the electrical conductivity losses are reduced, which also makes it possible to use carbon-modified silicon dioxide to reduce the loss power in the microwave IC. The purpose of this article was to study the electrical properties of porous silicon dioxide films. The object of study is a thin-film metal-dielectric-metal (MDM) structure based on silicon dioxide modified with carbon.
Keywords
	porous films, dielectric films, thin film capacitor, silicon dioxide, carbon, breakdown, thin film capacitor.
Library reference
	Strelkova A.E., Sakharov Yu.V. Investigation of Porous Silicon Dioxide Films Modified with Carbon // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 3. P. 170-175. doi:10.31114/2078-7707-2022-3-170-175
URL of paper
	http://www.mes-conference.ru/data/year2022/pdf/D032.pdf