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Analysis of Trends in the Development of Field-Effect Transistors
Authors
	Zhalnin V.P.
	Vlasov A.I.
	Korobenko I.S.
	Shadrin Y.A.
Date of publication
	2022
DOI
	10.31114/2078-7707-2022-2-53-60
Abstract
	In modern nanoelectronics, scaling transistors are increasingly affected by short-channel effects and leakage currents, which are eliminated by modified field-effect transistor structures, including silicon-on-insulator, double-gate transistor, segmented transistor, comb-like channel transistor, ribbon and tube transistors with gate-round channel, and structures like graphene transistors and transistors with vertical channel position are also investigated. They allow not only to improve the electrical characteristics of transistors, but also to increase their density and energy efficiency. It is proposed to separate the types of structures by channel position, because this is what reduces the impact of undesirable effects in the operation of transistors. As a result, designers and manufacturers can choose the optimal design implementation according to the technical requirements for the integrated circuit and the cost per transistor to be formed.
Keywords
	short-channel effect, leakage current, DG MOSFET, SegFET, FDSOI MOSFET, FinFET, nanotubes, nanosheet, graphene, vertical channel.
Library reference
	Zhalnin V.P., Vlasov A.I., Korobenko I.S., Shadrin Y.A. Analysis of Trends in the Development of Field-Effect Transistors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 2. P. 53-60. doi:10.31114/2078-7707-2022-2-53-60
URL of paper
	http://www.mes-conference.ru/data/year2022/pdf/D017.pdf