| The Research of Electrophysical Behavior of Infrared GaAs-, GaP- and Al0.3Ga0.7As-structures with P–N-Junction by Means of Simulation |
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| Authors |
| | Lagunovich N.L. |
| Date of publication |
| | 2022 |
| DOI |
| | 10.31114/2078-7707-2022-1-14-20 |
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| Abstract |
| | The aim of this work were the designing one-dimensional models of structures with p–n-junction received on basis of GaAs, GaP and Al0.3Ga0.7As and the research of their electrophysical behavior and radiative characteristics by means of simulation. One-dimensional models of diode structures under study were developed by the author to research its electrophysical behavior with help of simulation. The fundamental system of semiconductor equations is in the base of this models which are efficient in terms of machine time costs.These models are in the composition of program MOD-1D developed by the author also and the device modeling investigated homogeneous diode structures was performed by means of this program. MOD-1D gives the possibility to calculate and construct dependences of such diode structures emission intensity on the coordinate and to receive the dependences of their radiation intensity maximum Imax on the voltage applied to the p–n-junction. Calculations were carried out for different impurity gradients in regions of n- and p-types and trends of radiation intensity maximum Imax position changes were defined for various injection levels and doping concentration values. It was determined that the radiation intensity maximum biases into the region with higher impurity concentration levels n-type from the p–n-junction boundary at low injection levels and the further one shift stop almost and becomes insignificant at high injection levels. Devises are obtained on basis of GaAs, GaP and Al0.3Ga0.7As are not manufactured serially in production conditions of Open Join-Stock Company “INTEGRAL” – “INTEGRAL” Holding Managing Company. Thereby, research of electrophysical behavior of above mentioned infrared GaAs-, GaP- è Al0.3Ga0.7As-structures with p–n-junction executed with help of modeling in this paper. |
| Keywords |
| | p–n-junction, semiconductor light-emitting structure, device simulation, forward voltage drop, radiation intensity, injection level. |
| Library reference |
| | Lagunovich N.L. The Research of Electrophysical Behavior of Infrared GaAs-, GaP- and Al0.3Ga0.7As-structures with P–N-Junction by Means of Simulation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 1. P. 14-20. doi:10.31114/2078-7707-2022-1-14-20 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2022/pdf/D003.pdf |
