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Simulation of leakage currents of ferroelectric capacitors in integrated circuits
Authors
	Sigov A.S.
	Podgorny Yu.V.
	Vorotilov K.A.
Date of publication
	2021
DOI
	10.31114/2078-7707-2021-4-40-45
Abstract
	Thin ferroelectric films demonstrate unique physical properties, including spontaneous polarization, high permittivity, piezo- and pyroelectric activity, etc. For this reason, they are used and explored for applications in different electronic devices, including ferroelectric random access memory (FRAM), piezoelectric microelectromechanical systems, dynamic random access memory (DRAM), energy harvesting devices, etc. Leakage currents is a very important issue that should be taken into account in construction and operation of ferroelectric devices. In addition, leakage current is a sensitive diagnostic tool for monitoring material properties, such as defects, interfaces, and so on, that effects on device performance and reliability. In this paper we present a new universal model of the steady-state leakage current of ferroelectric capacitor structures. It based on a modified equation for the leakage current of a semiconductor diode with a p-n junction, taking into account the nonlinearity of the dependence of the volume resistance of the ferroelectric film on the injection level, determined by the value of the flowing current. P-n junction is formed due to migration of oxygen vacancies and their accumulation at the metal-ferroelectric interface. When the level of voltage acting on the structure changes, oxygen vacancies - mobile positive charges move in the electric field until a new thermodynamic equilibrium is established. The adequacy of the model has been successfully verified by simulating a steady-state current flowing through capacitor structures with ferroelectric PZT films of various thicknesses. The developed model can be used to improve operating parameters and reliability at the design and development of integrated circuits with ferroelectric capacitors, including ferroelectric memory devices, MEMS, etc.
Keywords
	integrated circuit, ferroelectrics, leakage currents, simulation.
Library reference
	Sigov A.S., Podgorny Yu.V., Vorotilov K.A. Simulation of leakage currents of ferroelectric capacitors in integrated circuits // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 4. P. 40-45. doi:10.31114/2078-7707-2021-4-40-45
URL of paper
	http://www.mes-conference.ru/data/year2021/pdf/D051.pdf