| Prospects of using SiGe BiCMOS technology for creation of the SHF circuits |
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| Authors |
| | Malyshev I.V. |
| | Ionov P.L. |
| | Repin V.V. |
| Date of publication |
| | 2006 |
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| Abstract |
| | In the report the brief review of development of new technological process – SiGe BiCMOS technology is resulted. Main standings and the physical effects used at insertion of SiGe in standard BiCMOS process, advantages of new technology, possible scopes and prospects of development of this technology are considered. Some geometrical and electric parameters of typical elements are resulted. |
| Keywords |
| | SiGe BiCMOS technology, SHF ciruits |
| Library reference |
| | Malyshev I.V., Ionov P.L., Repin V.V. Prospects of using SiGe BiCMOS technology for creation of the SHF circuits // Problems of Perspective Microelectronic Systems Development - 2006. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2006. P. 191-193. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2006/34.pdf |
