| Layout Dependent Effects Impact on Standard Cells Layout in 28 nm Technology Node |
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| Authors |
| | Medvedeva O.I. |
| | Semenov M.Y. |
| | Titov Y.A. |
| Date of publication |
| | 2021 |
| DOI |
| | 10.31114/2078-7707-2021-3-152-158 |
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| Abstract |
| | Impact of Layout Dependent Effects (LDE) on timing and power characteristics of standard cells becomes more critical in deep-submicron technologies. In this article different types of LDE parameters have been studied - Well Proximity Effect (WPE), Poly Spacing Effect (PSE), Length Of Diffusion (LOD), Oxide Spacing Effect (OSE). The set of test layouts have been developed to define impact of LDE parameters in 28 nm standard cells. Layout parasitic netlists for every test layout have been simulated to identify the changes of timing and power characteristics. Also, additional cells with the same functionality but with different layout implementation have been added in a library and logic synthesis for a test design have been implemented. Based on cell-level simulations and logic synthesis results for the test design the set of recommendations have been provided. |
| Keywords |
| | Layout Dependent Effects (LDE), Well Proximity Effect (WPE), Poly Spacing Effect (PSE), Length Of Diffusion (LOD), Oxide Spacing Effect (OSE). |
| Library reference |
| | Medvedeva O.I., Semenov M.Y., Titov Y.A. Layout Dependent Effects Impact on Standard Cells Layout in 28 nm Technology Node // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 3. P. 152-158. doi:10.31114/2078-7707-2021-3-152-158 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2021/pdf/D049.pdf |
