| The comparative analysis of circuit simulation models of SiGe heterojunction transistor |
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| Authors |
| | Petrosyants K.O. |
| | Torgovnikov R.A. |
| Date of publication |
| | 2006 |
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| Abstract |
| | In paper the review of modern models of the bipolar transistor is given and the analysis of these models with the purpose of a choice optimum for modelling SiGe transistor and calculation of ultrafast circuits on their basis is peformed. |
| Keywords |
| | circuit simulation models of SiGe heterojunction transistor |
| Library reference |
| | Petrosyants K.O., Torgovnikov R.A. The comparative analysis of circuit simulation models of SiGe heterojunction transistor // Problems of Perspective Microelectronic Systems Development - 2006. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2006. P. 184-190. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2006/33.pdf |
