| The Research of P-N+-Junction Electrophysical Behavior With Help of Simulation in Rectangular and Cylindrical Coordinate Systems |
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| Authors |
| | Lagunovich N.L. |
| Date of publication |
| | 2021 |
| DOI |
| | 10.31114/2078-7707-2021-1-33-38 |
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| Abstract |
| | The aim of this work was execution of silicon p–n+-type junction two-dimensional simulation in both Cartesian (rec-tangular) and cylindrical coordinate systems. To perform device modeling examined junction in both rectangular and cylindrical coordinate systems it was necessary to obtain junction structure previously, the its two-dimensional tech-nological simulation was performed for that with help of TSuprem4 program which is the part of Synopsys company software package. The constructive-process variables values of observable p–n+-junction structure were defined conse-quently technological modeling. The device simulation was performed in both Cartesian and cylindrical coordinate sys-tems with using Medici program for two-dimensional simulation of device electric characteristics. Medici is the component of Synopsys company software package also. The device modeling has permited to evaluate some electrophysical parameters significances of p–n+-junction and to plot its breakdown electric characteristics for model-ing cases in both rectangular and cylindrical coordinate systems. The comparative analysis of simulation results showed that for the considered p–n+-junction the difference in the values of technological and electrophysical parameters for calculating in Cartesian and cylindrical coordinate systems is insignificant. Particularly it is from 2.6% to 7.4% for process simulation. Breakdown voltage values were 8.74 V and 8.78 V after device modeling in Cartesian coordinate system and it was 8.65 V after simulation in cylindrical one. Thereby difference between breakdown voltage values ob-tained as a result of calculations in rectangular coordinate system and cylindrical one was 1–1.5 %, and it can be ignored. Therefore, the structure under consideration can be modeled in both coordinate systems with the sufficiently fine precision. |
| Keywords |
| | p–n-junction, semiconductor structures simulation, coordi-nate system, technological process, process parameter, elec-trophysical parameter, volt-ampere characteristic. |
| Library reference |
| | Lagunovich N.L. The Research of P-N+-Junction Electrophysical Behavior With Help of Simulation in Rectangular and Cylindrical Coordinate Systems // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 1. P. 33-38. doi:10.31114/2078-7707-2021-1-33-38 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2021/pdf/D003.pdf |
