| Modeling of heat flux distribution in microwave monolithic ICs based on gallium nitride-HEMT transistors |
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| Authors |
| | Zenchenko N.V. |
| | Maltsev P.P. |
| | Glinskiy I.A. |
| Date of publication |
| | 2020 |
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| Abstract |
| | The paper presents the results of modeling of heat fluxes distribution in monolithic ICs, which are based on HEMT transistors with AlGaN / GaN heterostructures. A simulation method is presented that includes the heat distribution profile in the heterostructure of the HEMT transistor, calculated using Atlas TCAD. The influence of topology and mounting method on HEMT transistor channel heating is studied. Presented method were used to calculate heat flux distribution for 8-gate HEMT transistor, as well as for calculating topology influence on active area of HEMT-transistor maximum temperature. Heat fluxes for two cases of IC mounting methods were calculated. Flip-chip montage showed temperature of active region 112 °C compared to 49 °C when using direct montage method. |
| Keywords |
| | HEMT, gallium nitride, modeling, finite element method, heat fluxes. |
| Library reference |
| | Zenchenko N.V., Maltsev P.P., Glinskiy I.A. Modeling of heat flux distribution in microwave monolithic ICs based on gallium nitride-HEMT transistors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 103-107. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2020/pdf/D110.pdf |
