| TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures |
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| Authors |
| | Petrosyants K.O. |
| | Popov D.A. |
| | Ismail-zade M.R. |
| | Sambursky L.M. |
| | Bo Li |
| | Wang Y.C. |
| Date of publication |
| | 2020 |
| DOI |
| | 10.31114/2078-7707-2020-4-2-8 |
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| Abstract |
| | Two types of the MOSFET models available in commercial versions of TCAD and SPICE simulators are completed with additional equations taking into account radiation effects. The adequacy of the models is demonstrated on two examples 1) 0.2 um and 0.24 um SOI/DSOI MOSFETs considering TID effects and single heavy ion impact, and 2) 28 nm bulk MOSFET, 45 nm and 28 nm high-k gate SOI MOSFETs considering TID effects. |
| Keywords |
| | decananometer MOSFETs; DSOI; TCAD; SPICE; total ionizing dose; single event upset. |
| Library reference |
| | Petrosyants K.O., Popov D.A., Ismail-zade M.R., Sambursky L.M., Bo Li, Wang Y.C. TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 2-8. doi:10.31114/2078-7707-2020-4-2-8 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2020/pdf/D122.pdf |
