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Investigation of CMOS Multiplexor SEL Sensitivity at Low Temperature  

Authors
 Mozhaev R.K.
 Lukashin V.P.
 Ukolov D.S.
 Pechenkin A.A.
Date of publication
 2020
DOI
 10.31114/2078-7707-2020-4-212-216

Abstract
 The paper presents the data obtained during the study of CMOS multiplexors single-event effects sensitivity at ion accelerator and at laser SEE-simulation facility. A comparison of SEL rate at normal and low temperature is made.
Keywords
 Single Event Effects, CMOS Multiplexor, laser SEE simulation technique, temperature dependence.
Library reference
 Mozhaev R.K., Lukashin V.P., Ukolov D.S., Pechenkin A.A. Investigation of CMOS Multiplexor SEL Sensitivity at Low Temperature // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 212-216. doi:10.31114/2078-7707-2020-4-212-216
URL of paper
 http://www.mes-conference.ru/data/year2020/pdf/D118.pdf

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