Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

GaN monolithic integrated circuits for 60 GHz transceivers
Authors
	Maltsev P.P.
	Gnatyuk D.L.
	Matveenko O.S.
	Putintsev B.G.
Date of publication
	2020
DOI
	10.31114/2078-7707-2020-4-208-211
Abstract
	This paper presents the results of research and development of the design of a single-chip monolithic microwave integrated circuit (MMIC) manufactured with 0,14 um GaN HEMT technology on Al2O3 substrates for 60 GHz Tx/Rx modules. Measurements of the manufactured system-on-chip, which include VCO, mixer and LNA, demonstrate its performance within the tuning range of 66-69 GHz band. The output power in Tx channel was not less than 10 dBm, while the tuning range of the local oscillator (LO) was not less than 2 GHz). Tõ/Rx module power consumption is 520 mW at 10 V supply voltage.
Keywords
	V-band, GaN, HEMT, tranceiver, system-on-chip
Library reference
	Maltsev P.P., Gnatyuk D.L., Matveenko O.S., Putintsev B.G. GaN monolithic integrated circuits for 60 GHz transceivers // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 208-211. doi:10.31114/2078-7707-2020-4-208-211
URL of paper
	http://www.mes-conference.ru/data/year2020/pdf/D113.pdf