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Features of electrical conductivity in doped quantum-dimensional systems in a transverse electric field
Authors
	Sinyavskii E.P.
	Karapetyan S.A.
	Kostyukevich N.S.
Date of publication
	2020
DOI
	10.31114/2078-7707-2020-4-244-247
Abstract
	The effect of electron scattering by impurities (in the model of the zero-radius potential on the kinetic processes in size-limited KP, QW in external electric and uniform magnetic transverse fields is studied. In the Born approximation, the probabilities of carrier transitions per unit time in the lowest dimensional of a quantized conduction band in a parabolic wire, in a quantum well with a parabolic potential. Calculations showed that the relaxation time in the model under consideration, and, consequently, the kinetic coefficients (electrical conductivity, thermopower) significantly depend on external fields. relaxation time increases due to the fact that with an increase in the electric field, the minimum potential electron energy in a dimensionally limited system moves away from the impurity center (for simplicity, we consider the case when impurities are on the axis of the nanowire), which leads to a decrease electron interactions with l an ad-mixture of impurities. The conductivity tensor in quantum wires and in parabolic quantum wells for non-degenerate electron gas are calculated. The influence of a transverse uniform magnetic field on the processes of carrier scattering by impurities is studied. It is shown that with increasing magnetic field strength, the relaxation time increases. This is associated with an increase in the localization of carriers in the field and, consequently, with a decrease in the interaction of carriers with impurity centers. Thus, it becomes possible to control transport phenomena in dimensionally limited doped systems by external fields.
Keywords
	electrical conductivity, quantum well, quantum wire, scattering by impurities, rough surface.
Library reference
	Sinyavskii E.P., Karapetyan S.A., Kostyukevich N.S. Features of electrical conductivity in doped quantum-dimensional systems in a transverse electric field // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 244-247. doi:10.31114/2078-7707-2020-4-244-247
URL of paper
	http://www.mes-conference.ru/data/year2020/pdf/D111.pdf