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High capacitance ratio radio-frequency micromechanical switch
Authors
	Tkachenko A.V.
	Lysenko I.E.
Date of publication
	2020
DOI
	10.31114/2078-7707-2020-3-237-243
Abstract
	This paper uses a combined approach and its verification to develop the design of a shunt RF MEMS switch with an ohmic contact type and a high capacitance ratio and a small air gap. This approach to increasing the value of the capacitance ratio consists in using the design of a floating metal mobile electrode without restrictions on the minimum thickness of the dielectric layer and the minimum value of the air gap, as well as using the material of the dielectric layer with a high permittivity. This approach differs from the existing ones in that it eliminates obvious disadvantages, namely, the problem of charging the dielectric layer is solved, and the electromechanical parameters of the switch are improved due to the minimum air gap. When using inhomogeneous serpentine elastic types of suspensions, it is possible to achieve a small value of the control voltage and high switching speed. The calculated value of the actuation voltage is 11.6 V and the switching time from one position of the movable metal membrane to another is ~ 12.2 . Based on the results of electromagnetic modeling, it can be concluded that the developed design of the shunt RF MEMS switch is suitable for use in the S-frequency range. In the up-state of the movable metal membrane, the insertion loss is less than -0.1 dB, and the reflection loss is less than -30 dB for this frequency range. In the down-state of the movable metal membrane, the isolation is more than -40 dB at the central resonant frequency of 3.6 GHz and the reflection loss is not more than -0.21 dB for this frequency range. Thus, the developed design of the RF MEMS shunt switch is suitable for building modern reconfigurable multi-band wireless devices.
Keywords
	radio-frequency micromechanical switch, inhomogeneous serpentine elastic suspension, high capacitance ratio, high isolation, low insertion loss.
Library reference
	Tkachenko A.V., Lysenko I.E. High capacitance ratio radio-frequency micromechanical switch // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 3. P. 237-243. doi:10.31114/2078-7707-2020-3-237-243
URL of paper
	http://www.mes-conference.ru/data/year2020/pdf/D102.pdf