GaAs and GaN MMIC Functional Blocks for an X-Band AESA T/R Front-End |
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Authors |
| Kondratenko A.V. |
| Bragin D.S. |
| Zykov D.D. |
Date of publication |
| 2020 |
DOI |
| 10.31114/2078-7707-2020-4-193-199 |
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Abstract |
| The results of the development of various functional assemblies of the X-band AESA T/R modules radiopath in the form of monolithic integrated circuits based on GaAs and GaN technological processes of domestic and overseas plants are presented in the report. The developed microchips are not inferior to foreign analogues in terms of the level of the achieved parameters and can be offered to a wide range of domestic manufacturers of electronic equipment. |
Keywords |
| receive/transmit module, monolithic integrated circuit, signal amplitude and phase control circuit, low-noise amplifier, power amplifier. |
Library reference |
| Kondratenko A.V., Bragin D.S., Zykov D.D. GaAs and GaN MMIC Functional Blocks for an X-Band AESA T/R Front-End // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 193-199. doi:10.31114/2078-7707-2020-4-193-199 |
URL of paper |
| http://www.mes-conference.ru/data/year2020/pdf/D099.pdf |