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GaAs and GaN MMIC Functional Blocks for an X-Band AESA T/R Front-End  

Authors
 Kondratenko A.V.
 Bragin D.S.
 Zykov D.D.
Date of publication
 2020
DOI
 10.31114/2078-7707-2020-4-193-199

Abstract
 The results of the development of various functional assemblies of the X-band AESA T/R modules radiopath in the form of monolithic integrated circuits based on GaAs and GaN technological processes of domestic and overseas plants are presented in the report. The developed microchips are not inferior to foreign analogues in terms of the level of the achieved parameters and can be offered to a wide range of domestic manufacturers of electronic equipment.
Keywords
 receive/transmit module, monolithic integrated circuit, signal amplitude and phase control circuit, low-noise amplifier, power amplifier.
Library reference
 Kondratenko A.V., Bragin D.S., Zykov D.D. GaAs and GaN MMIC Functional Blocks for an X-Band AESA T/R Front-End // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 193-199. doi:10.31114/2078-7707-2020-4-193-199
URL of paper
 http://www.mes-conference.ru/data/year2020/pdf/D099.pdf

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