| An universal algorithm for amplifier oriented linear GaAs pHEMT |
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| Authors |
| | Stepanov V.I. |
| | Popov A.A. |
| | Salnikov A.S. |
| Date of publication |
| | 2020 |
| DOI |
| | 10.31114/2078-7707-2020-4-76-82 |
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| Abstract |
| | Purpose To derive a universal algorithm for automatic parameter extraction of common source GaAs pHEMT small-signal equivalent circuit using the appropriate combination of the existing modeling techniques. The resulting algorithm should be applicable to GaAs pHEMTs of various total gate width, manufactured in different fabs even with different process nodes.
Methods Linear analysis of equivalent circuits for several modes of GaAs pHEMT operation; processing of measured S-parameters of several GaAs pHEMTs manufactured in different fabs; linear regression.
Results The following combination of parameter extraction techniques was found to build an accurate small-signal model: extrinsic capacitances obtained using the pinched-off cold mode S-parameters with empirical partitioning coefficient, extrinsic inductances and resistances are extracted from the unbiased cold mode S-parameters using the equivalent circuit with intrinsic capacitances and all intrinsic parameters are calculated from the S-parameters measured at desired bias point using the equivalent circuit with gate-drain resistance. The combination of techniques was tested on data measured on pHEMTs with various total gate width that were manufactured in three different fabs. The average S-parameters modeling error was less than 10%.
Discussion Developed parameter extraction algorithm can be applied to build small-signal models of GaAs pHEMTs of different total gate width, manufactured in different fabs. The resulting models are accurate enough for practical purposes such as MMIC design. |
| Keywords |
| | GaAs pHEMT, linear model, parasitic parameter extraction, equivalent circuit, automation algorithm, cold FET. |
| Library reference |
| | Stepanov V.I., Popov A.A., Salnikov A.S. An universal algorithm for amplifier oriented linear GaAs pHEMT // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 76-82. doi:10.31114/2078-7707-2020-4-76-82 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2020/pdf/D082.pdf |
