| Mathematical simulation of electromigratory faulures of interlayer connection of VLSI |
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| Authors |
| | Petrosyants K.O. |
| | Shirabajkin D.B. |
| Date of publication |
| | 2006 |
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| Abstract |
| | Increase of LSI productivity directly is connected with reduction of the characteristic sizes of their structural elements. One of principal causes of LSI failure is electromigratory destruction of conductors. Redistribution of vacancies on surface of conductor results to failure of conductor. It is proposed the general 3D model of failures of conducting element, simplified 2D model and numerical method of durability calculation. |
| Keywords |
| | electromigratory faulures |
| Library reference |
| | Petrosyants K.O., Shirabajkin D.B. Mathematical simulation of electromigratory faulures of interlayer connection of VLSI // Problems of Perspective Microelectronic Systems Development - 2006. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2006. P. 142-147. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2006/24.pdf |
