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Field-like torque-component influence on the magnetization dynamics in the three-layered nanostructure  

Authors
 Ostrovskaya N.V.
 Skidanov V.A.
Date of publication
 2020
DOI
 10.31114/2078-7707-2020-3-127-132

Abstract
 The normal form of the dynamical system describing the motion of the magnetization in the active layer of the three-layered STT-MRAM element was derived with the field-like component of the torque taken into account. The qualitative analysis of the dynamical system was performed. On the “field–current” plane the regions where the behavior of the trajectories is topologically equivalent, were determined. The critical lines separated the regions were found analytically. The results were compared with those obtained for the case without the field-like component of the torque in the equa-tion of the motion.
Keywords
 magnetic random access memory, MRAM, magnetization reversal, generalized Landau-Lifshits-Gilbert equation, dynamical system, bifurcation, Andronov-Hopf theorem
Library reference
 Ostrovskaya N.V., Skidanov V.A. Field-like torque-component influence on the magnetization dynamics in the three-layered nanostructure // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 3. P. 127-132. doi:10.31114/2078-7707-2020-3-127-132
URL of paper
 http://www.mes-conference.ru/data/year2020/pdf/D061.pdf

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